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 SPICE MODEL: BSS84V
BSS84V
Lead-free Green
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
NEW PRODUCT
Features
* * * * * * * * * * * * * *
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 3) "Green" Device (Note 4)
D G A
SOT-563 Dim
BC
Min 0.15 1.10 1.55 0.90 1.50 0.56 0.10 0.10
Max 0.30 1.25 1.70 0.50 1.10 1.70 0.60 0.30 0.18
Typ 0.25 1.20 1.60 1.00 1.60 0.60 0.20 3/4
A B C D G H K L
L
Mechanical Data
Case: SOT-563 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish 3/4 Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Code (See Page 2): K84 Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approx.)
D2 G1
K H
M
M
All Dimensions in mm
S1
S2
G2
D1
Maximum Ratings
Drain-Source Voltage Drain-Gate Voltage (Note 1) Gate-Source Voltage Drain Current (Note 2)
@ TA = 25C unless otherwise specified Symbol VDSS VDGR Continuous Continuous VGSS ID Pd RqJA Tj, TSTG Value -50 -50 20 -130 150 833 -55 to +150 Units V V V mA mW C/W C
Characteristic
Total Power Dissipation (Note 2) Thermal Resistance, Junction to Ambient (Note 2) Operating and Storage Temperature Range
Note:
1. R GS 20KW. 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. No purposefully added lead. 4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30605 Rev. 7 - 2
1 of 4 www.diodes.com
BSS84V
a Diodes Incorporated
NEW PRODUCT
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time
@ TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min -50 3/4 3/4 3/4 3/4 -0.8 3/4 0.05 3/4 3/4 3/4 3/4 3/4 Typ -75 3/4 3/4 3/4 3/4 -1.6 2 3/4 3/4 3/4 3/4 10 18 Max 3/4 -15 -60 -100 50 -2.0 10 3/4 45 25 12 3/4 3/4 Unit V A A nA nA V W S pF pF pF ns ns VDD = -30V, ID = -0.27A, RGEN = 50W, VGS = -10V VDS = -25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = -250mA VDS = -50V, VGS = 0V, TJ = 25C VDS = -50V, VGS = 0V, TJ = 125C VDS = -25V, VGS = 0V, TJ = 25C VGS = 20V, VDS = 0V VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A
Ordering Information
Device BSS84V-7
Notes:
(Note 6) Packaging SOT-563 Shipping 3000/Tape & Reel
5. Short duration test pulse used to minimize self-heating effect. 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
(Note 7)
K84
YM
K84 = Product Type Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September
Notes:
7. Package is non-polarized. Parts may be on reel in orientation illustrated, 180 rotated, or mixed (both ways).
Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 Apr 4 May 5 Jun 6 Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D
DS30605 Rev. 7 - 2
2 of 4 www.diodes.com
BSS84V
-1.4
NEW PRODUCT
200
PD, POWER DISSIPATION (mW)
-1.2
VGS = -10V
ID, DRAIN CURRENT (A)
150 125 100 75 50 25 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature
-1.0 -0.8 -0.6 -0.4
VGS = -8V
VGS = -5V
VGS = -3V
-0.2 0 0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 Typical Output Characteristics -4.5 -5
-1
3.0 2.5
ID, DRAIN CURRENT (A)
VDS = -10V
-0.1
2.0
VGS = -5V
1.5
VGS = -10V
-0.01
1.0 0.5 0 -0.001
-0.001 0 -1 -2 -3 -4 -5
-0.01
-0.1
-1
VGS, GATE-SOURCE VOLTAGE (V) Fig. 3 Typical Transfer Characteristics
8 7 6 5 4 3 2 1 0 0 -2 -4 -6 -8 -10 VGS, GATE-SOURCE VOLTAGE (V) Fig. 5 Static Drain-Source On-Resistance vs. Gate-Source Voltage
ID = -65mA ID = -130mA
ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
-1
IDR, REVERSE DRAIN CURRENT (A)
-0.1
VGS = -10V VGS = -0V
-0.01
-0.001 0 -0.5 -1.0 -1.5 VSD, BODY DIODE FORWARD VOLTAGE (V) Fig. 6 Reverse Drain Current vs. Body Diode Forward Voltage
DS30605 Rev. 7 - 2
3 of 4 www.diodes.com
BSS84V
NEW PRODUCT
IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
DS30605 Rev. 7 - 2
4 of 4 www.diodes.com
BSS84V


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